- vacuum epitaxy
- епітаксія у вакуумі, вакуумна епітаксія
English-Ukrainian dictionary of microelectronics. 2013.
vacuum epitaxy
Смотреть что такое "vacuum epitaxy" в других словарях:
vacuum epitaxy — vakuuminė epitaksija statusas T sritis fizika atitikmenys: angl. vacuum epitaxy vok. Vakuumepitaxie, f rus. вакуумная эпитаксия, f pranc. épitaxie à vide, f … Fizikos terminų žodynas
Space Vacuum Epitaxy Center — is the 8,000 square feet of laboratory space in 3 buildings on the University of Houston campus. The SVEC facilities contains equipment dedicated to thin film deposition, processing and characterization of III V compound semiconductor, high… … Wikipedia
Epitaxy — refers to the method of depositing a monocrystalline film on a monocrystalline substrate. The deposited film is denoted as epitaxial film or epitaxial layer. The term epitaxy comes from a Greek root ( epi above and taxis in ordered manner ) which … Wikipedia
Molecular beam epitaxy — A simple sketch showing the main components and rough layout and concept of the main chamber in a Molecular Beam Epitaxy system Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals. It was invented in the late… … Wikipedia
Molecular-beam epitaxy — (MBE), is one of several methods of depositing single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho.MethodMolecular beam epitaxy takes place in high vacuum or ultra high vacuum (10−8… … Wikipedia
Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… … Wikipedia
Ultra high vacuum — (UHV) is the vacuum regime characterised by pressures lower than about 10−7 pascal or 100 nanopascals ( 10−9 torr). UHV requires the use of special materials in creating the vacuum system, extreme cleanliness to maintain the vacuum system, and… … Wikipedia
Metalorganic vapour phase epitaxy — (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method of epitaxial growth of materials, especially compound semiconductors from the surface… … Wikipedia
Wake Shield Facility — Déploiement du WSF en utilisant le bras robotisé de la navette spatiale Wake Shield Facility (WSF) est une plate forme expérimentale qui a été placé à plusieurs reprises en orbite basse par la navette spatiale. Le WSF est formé d un disque en… … Wikipédia en Français
Wake Shield Facility — is an experimental science platform that was placed in low earth orbit by the Space Shuttle. It is a 3.7 meter (12 ft) diameter, free flying stainless steel disk.The WSF is deployed in the wake of the Space Shuttle at an orbital altitude of over… … Wikipedia
Memristor — Type Passive Working principle Memristance Invented Leon Chua (1971) First production HP Labs (2008) Electronic symbol … Wikipedia
